Epitaxial-side-down mounted high-power semiconductor lasers

摘要

A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.

主权项

1. A light-emitting apparatus mounted epitaxial-side-down on a mounting surface, comprising:
a semiconductor light-emitting structure formed on a substrate; and a plurality of spaced semiconductor posts situated on the substrate along each side of the semiconductor light-emitting structure,
the plurality of posts on each side of the semiconductor light-emitting structure being separated from the semiconductor light-emitting structure by a corresponding first channel between the semiconductor light-emitting structure and the plurality of posts, and further being separated from one another by a plurality of corresponding second channels between the posts,an insulating film being deposited on the posts and on side surfaces of the semiconductor light-emitting structure, anda top metal contact layer being deposited on top of the insulating film and on the top surface of the semiconductor light-emitting structure to form coated posts and a coated semiconductor light-emitting structure,the posts, the insulating film, and the top metal contact layer being configured so that the coated posts have a maximum height with respect to the substrate approximately equal to a maximum height of the coated semiconductor light-emitting structure; wherein the light-emitting apparatus is mounted epitaxial-side-down on the mounting surface by means of solder applied to the plurality of coated posts and the coated semiconductor light-emitting structure; and wherein the first and second channels provide an adequate empty volume for a volume of solder displaced by the coated semiconductor light-emitting structure and the coated posts to occupy and flow through without the solder contacting a sidewall of the substrate or end facet of the semiconductor light-emitting structure.