| 摘要 |
<p>The present invention relates to a silicon carbide insulated gate bipolar transistor and a manufacturing method thereof. A method according to the present invention includes a step of forming a well region in an epitaxy layer, a step of forming a doping region in the well region, a step of forming a gate oxide layer on the epitaxy layer and the well region, a step of forming an upper metal layer on the doping region and the gate oxide layer, a step of forming a buffer region on the back surface of the epitaxy layer, a step of forming a P-type collector region in the back surface of the buffer layer, and a step of forming a lower metal layer in the back surface of the P-type collector region. According to the present invention, the breakdown voltage of an insulating gate bipolar transistor using silicon carbide can be improved by adding a buffer region of a field stop structure.</p> |
