| 发明名称 | High efficiency group III nitride LED with lenticular surface | ||
| 摘要 | A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts. | ||
| 申请公布号 | US8878209(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201414183955 | 申请日期 | 2014.02.19 |
| 申请人 | Cree, Inc. | 发明人 | Edmond John Adam;Slater, Jr. David B.;Bharathan Jayesh;Donofrio Matthew |
| 分类号 | H01L33/00;H01L33/22;H01L33/44 | 主分类号 | H01L33/00 |
| 代理机构 | Myers Bigel Sibley & Sajovec, P.A. | 代理人 | Myers Bigel Sibley & Sajovec, P.A. |
| 主权项 | 1. A high efficiency Group III nitride light emitting diode comprising: a Group III nitride-based light emitting region comprising a plurality of Group III nitride-based layers; and a lenticular surface that directly contacts one of said Group III nitride-based layers of said light emitting region, the lenticular surface comprising transparent material that is different from the one of said Group III nitride-based layers of said light emitting region that the lenticular surface directly contacts. | ||
| 地址 | Durham NC US | ||