Supply voltage generating circuit and semiconductor device having the same

摘要

A supply voltage generating circuit includes a first charge pump circuit that generates a first internal supply voltage, and second charge pump circuit that generates a second internal supply voltage. The absolute value of the second internal supply voltage is greater than that of the first internal supply voltage. The output terminal of the first charge pump circuit is connected to a secondary-side charging terminal of the second charge pump circuit. The secondary-side is an output-side of the corresponding charge pump circuit, and the charging terminal is an auxiliary charging terminal that supplies an auxiliary charge to a secondary-side output terminal of the corresponding charge pump circuit. The output terminal of the second charge pump circuit outputs a voltage value that is the result of adding a prescribed voltage value to the value of the first internal supply voltage applied to the charging terminal.

主权项

1. A phase change memory device comprising:
a phase change memory cell array; an external power supply terminal to receive an external voltage; a first charge pump configured to boost the external voltage to a set voltage for programming the phase change memory cells to a crystalline state; and a second charge pump configured to boost the set voltage to a reset voltage for programming the phase change memory cells to an amorphous state.