Integrated high voltage divider

摘要

An integrated circuit containing a voltage divider having an upper resistor of unsilicided gate material over field oxide around a central opening and a drift layer under the upper resistor, an input terminal coupled to an input node of the upper resistor adjacent to the central opening in the field oxide and coupled to the drift layer through the central opening, a sense terminal coupled to a sense node on the upper resistor opposite from the input node, a lower resistor with a sense node coupled to the sense terminal and a reference node, and a reference terminal coupled to the reference node. A process of forming the integrated circuit containing the voltage divider.

主权项

1. An integrated circuit, comprising:
a substrate comprising a semiconductor having a first conductivity type; field oxide formed at a surface of said substrate; and a voltage divider, including:
an upper resistor located over said field oxide and disposed around a central opening in said field oxide, said upper resistor having an input node adjacent to said central opening in said field oxide and a sense node at an outer edge of said upper resistor;a drift layer located in said substrate under said upper resistor and said central opening in said field oxide, said drift layer having a second conductivity type opposite from said first conductivity type;an input terminal electrically coupled to said input node of said upper resistor and electrically coupled to said drift layer through said central opening in said field oxide;a sense terminal electrically coupled to said sense node of said upper resistor; anda lower resistor electrically coupled to said sense terminal at one end of said lower resistor and to a reference node at an opposite end of said lower resistor.