Semiconductor device and method for manufacturing the same

摘要

In the semiconductor device, a line-type buried gate is formed by burying a non-operating gate (isolation gate) with a polysilicon material to reduce a work function and a Gate Induced Drain Leakage (GIDL) caused by the non-operating gate, resulting in improvement of refresh characteristics of the semiconductor device. Operating gates including a metal conductive material may be formed in a separate step.

主权项

1. A semiconductor device formed in a semiconductor substrate comprising:
an operating gate including a laminate structure of a gate oxide film, a gate metal layer, and a nitride film; and a non-operating gate including a laminate structure of a gate oxide film, a gate polysilicon layer, and a nitride film, wherein no voltage is applied to the non-operating gate.