Diode for variable-resistance material memories, processes of forming same, and methods of using same

摘要

A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions.

主权项

1. An apparatus comprising:
a diode plug disposed upon a second-patterned portion of a semiconductive film, wherein the diode plug contacts a first wall, a second wall, a third wall, and a fourth wall of the semiconductive film; an electrode disposed above and on the diode plug; a shallow-trench isolation (STI) adjacent to the Schottky diode; and a variable-resistance material memory (VRMM) cell coupled to the electrode, wherein the variable-resistance material is a doped chalcogenide glass of AxBy, where B is one or more of sulfur, selenium, or tellurium and A is at least one element from B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, Cl, Br, I, or At with dopants of one or more of Au, Ag, Pt, Cu, Cd, In, Ru, Co, Cr, Ni, Mn, or Mo.