Semiconductor structure and manufacturing method for the same and ESD circuit

摘要

A semiconductor structure and manufacturing method for the same, and an ESD circuit are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped region and a resistor. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity. The third doped region has the first type conductivity. The first doped region and the third doped region are separated by the second doped region. The resistor is coupled between the second doped region and the third doped region. An anode is coupled to the first doped region. A cathode is coupled to the third doped region.

主权项

1. A manufacturing method for a semiconductor structure, comprising:
forming a first doped region having a first type conductivity in a substrate; forming a second doped region having a second type conductivity opposite to the first type conductivity in the substrate; forming a third doped region having the first type conductivity in the second doped region, wherein the first doped region and the third doped region are separated by the second doped region; forming a dielectric layer on the second doped region; forming a dielectric structure comprising a first dielectric portion thicker than the dielectric layer, wherein the first doped region and the second doped region have a substantial vertical PN junction therebetween, the substantial vertical PN junction is wholly under the first dielectric portion; and forming a field plate structure on the dielectric layer and the first dielectric portion.