| 摘要 |
A large-area, high-purity, low-cost single crystal semi-insulating gallium nitride that is useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications is provided. The gallium nitride is formed by doping gallium nitride material during ammonothermal growth with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride. |
| 主权项 |
1. A bulk gallium-containing nitride crystal comprising:
a length greater than about 5 millimeters; a wurtzite crystal structure; a concentration of oxygen from about 1010 atoms per cubic centimeter to about 1017 atoms per cubic centimeter; an impurity concentration greater than about 1015 cm−3 of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl; a compensatory dopant selected from V, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, and a combination of any of the foregoing, wherein the concentration of the compensatory dopant is between about 1014 cm−3 and about 1016 cm−3; an optical absorption coefficient less than about 10 cm−1 at wavelengths between about 395 nm and about 460 nm; and an electrical resistivity at room temperature greater than about 107 ohm-centimeter. |
