| 摘要 |
<p>PURPOSE: A method for fabricating GaN semiconductor device is provided to increase the stability of an element by reducing a leakage current and reverse characteristic of the element. CONSTITUTION: A method for fabricating GaN semiconductor device is comprised of the steps: Injecting an ion into the passivation layer(270) to suppress electric field concentration and distribution; a schottky barrier diode(SBD, 200) includes a substrate(210), a crystal nucleus grown layer(211), a buffer layer, a barrier(230), and a cap layer(240); crystal nucleus grown layer, the buffer layer, the barrier, and the cap layer are successively laminated on a substrate; the anode electrode and the cathode electrode(250) which are separately placed on the cap layer; and the passivation layer is arranged on the cap layer between the cathode electrode and the anode electrode.</p> |
