发明名称 |
Light emitting diode with a temperature detecting pattern and manufacturing method thereof |
摘要 |
A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision. |
申请公布号 |
US8878222(B2) |
申请公布日期 |
2014.11.04 |
申请号 |
US201213419490 |
申请日期 |
2012.03.14 |
申请人 |
Lite-On Electronics (Guangzhou) Limited;Lite-On Technology Corporation |
发明人 |
Chen Chen-Yu |
分类号 |
H01L33/62;H01L27/15;G01K13/10;G01K7/18;H01L33/64 |
主分类号 |
H01L33/62 |
代理机构 |
Li & Cai Intellectual Property (USA) Office |
代理人 |
Li & Cai Intellectual Property (USA) Office |
主权项 |
1. A light emitting device comprising:
a package structure; a light emitting diode mounted on the package structure, wherein the light emitting diode having a semiconductor structure, a temperature detecting pattern formed between the package structure and the semiconductor structure, and an insulating layer formed between the semiconductor structure and the temperature detecting pattern; and an encapsulating material provided for covering the light emitting diode so as to protect the light emitting diode and achieve optical effects. |
地址 |
Guangzhou CN |