发明名称 Light emitting diode with a temperature detecting pattern and manufacturing method thereof
摘要 A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.
申请公布号 US8878222(B2) 申请公布日期 2014.11.04
申请号 US201213419490 申请日期 2012.03.14
申请人 Lite-On Electronics (Guangzhou) Limited;Lite-On Technology Corporation 发明人 Chen Chen-Yu
分类号 H01L33/62;H01L27/15;G01K13/10;G01K7/18;H01L33/64 主分类号 H01L33/62
代理机构 Li & Cai Intellectual Property (USA) Office 代理人 Li & Cai Intellectual Property (USA) Office
主权项 1. A light emitting device comprising: a package structure; a light emitting diode mounted on the package structure, wherein the light emitting diode having a semiconductor structure, a temperature detecting pattern formed between the package structure and the semiconductor structure, and an insulating layer formed between the semiconductor structure and the temperature detecting pattern; and an encapsulating material provided for covering the light emitting diode so as to protect the light emitting diode and achieve optical effects.
地址 Guangzhou CN
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