发明名称 |
METHOD FOR FORMING TRANSPARENT ELECTRODE AND THE TRANSPARENT ELECTRODE, LIGHT-EMITTING DIODE AND OPTICAL DEVICE INCLUDING IT |
摘要 |
<p>The present invention provides a method for forming a metal layer capable of performing a layer-by-layer growth at a thin thickness and forming a transparent electrode by successively stacking a contact layer, a metal layer, and a metal oxide layer on a support substrate or an optical device. According to the present invention, the transparent electrode of high performance, low surface resistance, and high light transmission is formed without additional process installation and steps by the connection of an Ag thin film between domains at a thin thickness by an addictive (dopant) like Mg and Ti. Thereby, an optical device with high performance is manufactured.</p> |
申请公布号 |
KR20140126842(A) |
申请公布日期 |
2014.11.03 |
申请号 |
KR20130044648 |
申请日期 |
2013.04.23 |
申请人 |
POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
LEE, JONG LAM;LEE, ILL HWAN;SONG, YANG HEE |
分类号 |
H01B13/00;H01B5/14;H01L33/42 |
主分类号 |
H01B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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