发明名称 Zinc oxide nanostructures
摘要 Disclosed is a method for producing zinc oxide nanostructures, the method comprising: providing a zinc anode and a cathode in an arc discharge chamber, wherein the cathode is arranged horizontally in the arc discharge chamber and the anode is arranged vertically; supplying current to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporise the anode and produce the zinc oxide nanostructures; terminating the current supply to the anode and the cathode; and collecting the resulting zinc oxide nanostructures. Also disclosed is a method for producing a sensor component, the method comprising: providing a sensor substrate comprising a conducting thin film at least partially covering at least two regions on at least one surface of a sensor substrate material to define a gap in the conducting thin film; applying a mixture comprising zinc oxide nanostructures and a nonionic polymer to at least a portion of the gap in the conducting thin film and thereby bridge the gap; and optionally, annealing the mixture of zinc oxide nanostructures and nonionic polymer applied to the sensor substrate, to provide the sensor component. Further disclosed is a sensor component comprising: a sensor substrate comprising a conducting thin film at least partially covering at least two regions on at least one surface of a sensor substrate material to define a gap in the conducting thin film; and a mixture comprising zinc oxide nanostructures and a nonionic polymer covering at least a portion of the gap in the conducting thin film, thereby bridging the gap.
申请公布号 NZ609155(A) 申请公布日期 2014.10.31
申请号 NZ20090609155 申请日期 2009.04.14
申请人 INSTITUTE OF GEOLOGICAL AND NUCLEAR SCIENCES LIMITED 发明人 KENNEDY JOHN VEDAMUTHU;FUTTER RICHARD JOHN;FANG FANG;MARKWITZ ANDREAS
分类号 C01G9/02;C01G9/03 主分类号 C01G9/02
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