| 摘要 |
<p>PURPOSE: An etching solution composition is provided to implement uniform etching by increasing a etch rate without damage to lower film and equipment. CONSTITUTION: In a device, an etchant composites comprises includes H2O2 of 5-30wt%, fluorine containing of 0.1-2wt%, a compound containing the NH4+ salt of 0.55wt%, water. H2O2 oxidizes the surface of an aluminum layer and a titanium layer. A perfluorinated compound etches the oxidized surface of the aluminum layer and the titanium layer. The compound including the NH4+ salt controls the etching of the titanium layer and aluminum layer. The perfluorinated compound is dissociated into fluorine ion and a multi-element fluorine ion.</p> |
