| 摘要 |
<p>In a method for fabricating a semiconductor device according to the present invention, gate lines are formed in a memory cell area on a semiconductor substrate, and an interlayer insulating film for insulating the gate lines are formed. A first contact plug and a second contact plug are formed, wherein the contact plugs penetrates through the interlayer insulating film, and are located near the both sides of the gate lines between the gate lines. A landing pad which overlaps with part of the first contact plug on the first contact plug and the interlayer insulating film is formed. By etching the second contact plug, a recess contact plug having a recess part which is recessed to be lower than the surface of a first interlayer insulating film is formed. A cross-sectional distance between the landing pad and the recess contact plug is longer due to the recess part. The recess contact plug is formed by forming a mask layer for forming a recess contact plug exposing the second contact plug on the first contact plug and the interlayer insulating film, and forming a recess part by etching the second contact plug using the mask layer for forming a recess contact plug as an etching mask. The landing pad is formed by forming a buried insulating film filling the recess part, forming a conductive film for a landing pad on the first contact plug, the buried insulating film, and the interlayer insulating film, forming a mask layer for forming a landing pad on the conductive film, and etching the conductive film for landing pad using the mask layer for forming a landing pad as an etching mask to overlap with part of the first contact plug.</p> |
