| 发明名称 |
METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH METAL-DOPED RESISTIVE SWITCHING LAYER |
| 摘要 |
A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide. |
| 申请公布号 |
US2014322862(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201414256728 |
申请日期 |
2014.04.18 |
| 申请人 |
ASM IP Holding B.V. |
发明人 |
Xie Qi;Machkaoutsan Vladimir;Maes Jan Willem;Givens Michael;Raisanen Petri |
| 分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a resistive random access memory (RRAM) device comprising:
forming a first electrode; forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD); doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide; and forming a second electrode by thermal atomic layer deposition (ALD), wherein the resistive switching layer is interposed between the first electrode and the second electrode. |
| 地址 |
Almere NL |
