发明名称 REACTIVE SPUTTERING PROCESS
摘要 <p>Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material transitioning to the gas phase is ionized. Reactive gas flow is established and reacts with the material of the target surface. Voltage pulse duration is such that, during the pulse, the target surface where the current flows is at least partly covered most of the time with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.</p>
申请公布号 SG11201402945Y(A) 申请公布日期 2014.10.30
申请号 SG11201402945Y 申请日期 2012.11.23
申请人 OERLIKON SURFACE SOLUTIONS AG, TRÜBBACH 发明人 KRASSNITZER, SIEGFRIED
分类号 主分类号
代理机构 代理人
主权项
地址