METHOD FOR POLISHING SEMICONDUCTOR WAFER BY MEANS OF SIMULTANEOUS DOUBLE-SIDE POLISHING

摘要

PROBLEM TO BE SOLVED: To provide a means in which flatness of a semiconductor wafer is improved after DSP has been performed.SOLUTION: In a method, a semiconductor wafer is polished by means of simultaneous double-side polishing in a gap between a lower polishing pad 4 and an upper polishing pad 3 of a polishing device. The method includes the steps of: dressing one or both of the polishing pads using a dressing tool; and polishing a semiconductor wafer in the gap after the dressing. During the dressing, the distance between the dressing tool and a polishing pad at a side opposite to the polishing pad to be dressed differs from a corresponding distance at the outer edge of the polishing pad, at the inner edge of the polishing pad.