| 摘要 |
PROBLEM TO BE SOLVED: To achieve improvement in characteristics and reliability in a semiconductor device using a nitride semiconductor.SOLUTION: A semiconductor device comprises: a semiconductor layer 12 formed on a substrate 10; electrode contact windows 30, 28 which are formed on a surface of the semiconductor layer 12 and have inner walls of a forward tapered shape; and a source electrode 32 and a drain electrode 32 which are formed on the semiconductor layer, in which the drain electrode 32 is provided in contact with the inner walls having the forward tapered shape of the electrode contact windows 30, 28. By moderating field concentration at the drain electrode 32 and inhibiting the occurrence of a high electric field at ends of the drain electrode, breakdown conduction can be inhibited. |
