MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC FILM, AND METHOD FOR MANUFACTURING MAGNETIC FILM

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance element where a magnetization direction is stable in a direction perpendicular to a film surface and magnetoresistance change ratio is controlled, and to provide a magnetic memory using the magnetoresistance element, a magnetic film, a method for manufacturing the magnetic film.SOLUTION: A material for a ferromagnetic layer constituting a magnetoresistance element is configured with a ferromagnetic material that contains at least one kind of 3d transition metal, thereby, magnetoresistance change ratio is controlled. A magnetization direction is changed from a film in-plane direction to a direction perpendicular to a film surface by controlling film thickness of the ferromagnetic layer at an atomic layer level.