| 摘要 |
The invention relates to a method for depositing layers, particularly of elements of the III- and V-, of the II- and VI- or of the IV-main group on one or a plurality of substrates (7) arranged in a process chamber (6) of a CVD reactor, wherein in at least one deposition step at least one carbon-containing gaseous source material is used, wherein during layer growth on the one or plurality of substrates, parasitic coatings are also deposited on the wall surfaces (5, 8) of the process chamber (6), wherein, after removal of the one or plurality of substrates (7) from the process chamber, the parasitic coatings react in a cleaning process, as a result of the introduction of a gas flow containing one or a plurality of cleaning gases and heating of the process chamber (6) to a cleaning temperature, into volatile substances which are transported out of the process chamber (6) with the gas flow. In order to remove from the process chamber the soot-like residues remaining after a first cleaning step, according to the invention the cleaning process comprises a breakdown step in which the parasitic coatings are broken down into volatile constituents and a carbon-containing residue remains on the wall surfaces (5, 8) which reacts in an ammonia cleaning step with ammonia introduced into the process chamber to form a volatile compound which is transported out of the process chamber with the gas flow. |
