发明名称 METHOD FOR MAKING AN INFRARED DETECTION DEVICE
摘要 An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in a first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector.
申请公布号 US2014319350(A1) 申请公布日期 2014.10.30
申请号 US201314107106 申请日期 2013.12.16
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 发明人 YON Jean-Jacques;DUMONT Geoffroy;IMPERINETTI Pierre;POCAS Stephane
分类号 G01J5/20;H01L31/18;G01J5/02 主分类号 G01J5/20
代理机构 代理人
主权项 1. An infrared detection device including at least: an electronic readout circuit made on and/or in a first semiconducting substrate, and on which are arranged several levels of electrical interconnections such that a first level of electrical interconnections is arranged between the electronic readout circuit and a last level of electrical interconnections; an etching stop layer arranged between the last and a penultimate level of electrical interconnections and capable of withstanding etching of a first inter-metal dielectric layer arranged between the etching stop layer and the last level of electrical interconnections; an infrared heat detector electrically connected to the electronic readout circuit by at least one first electrically conducting via of the last level of electrical interconnections which crosses the etching stop layer; a connection pad formed by the last level of electrical interconnections, electrically connected to the electronic readout circuit by at least one second electrically conducting via of the last level of electrical interconnections which crosses the etching stop layer, and able to be electrically contacted from the outside of the infrared detection device; wherein the infrared heat detector and the connection pad are each spaced apart from the etching stop layer by a non-zero distance substantially equal relatively to each other, wherein the first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in the first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector.
地址 Paris FR