发明名称 |
SEMI-POLAR III-NITRIDE FILMS AND MATERIALS AND METHOD FOR MAKING THE SAME |
摘要 |
A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes. |
申请公布号 |
WO2014176283(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
WO2014US35042 |
申请日期 |
2014.04.22 |
申请人 |
OSTENDO TECHNOLOGIES, INC. |
发明人 |
SOUKHOVEEV, VITALI;IVANTSOV, VLADIMIR;HASKELL, BENJAMIN A.;EL-GHOROURY, HUSSEIN S.;SYRKIN, ALEXANDER |
分类号 |
C30B25/18;C30B23/02;C30B29/40 |
主分类号 |
C30B25/18 |
代理机构 |
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