| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar thin-film transistor having a high on-off ratio and a transfer characteristic curve with a high symmetry property.SOLUTION: A bipolar thin-film transistor of the present invention includes a source electrode, a drain electrode, a semiconductor layer, first and second excess conductive layers, an insulating layer, and a gate electrode. The length of a part where the first excess conductive layer is overlapped with the gate electrode is larger than the distance between the gate electrode and the first excess conductive layer, and the length of a part where the second excess conductive layer is overlapped with the gate electrode is larger than the distance between the gate electrode and the second excess conductive layer. The excess conductive layers are composed of a graphene film, and the semiconductor layer is composed of a carbon nanotube structure. |
