发明名称 Radiation Conversion Device and Method of Manufacturing a Radiation Conversion Device
摘要 A radiation conversion device such as a photovoltaic cell, a photodiode or a semiconductor radiation detection device, includes a semiconductor portion with first compensation zones of a first conductivity type and a base portion that separates the first compensation zones from each other. The first compensations zones are arranged in pillar structures. Each pillar structure includes spatially separated first compensation zones and extends in a vertical direction with respect to a main surface of the semiconductor portion. Between neighboring ones of the pillar structures the base portion includes second compensation zones of a second conductivity type, which is complementary to the first conductivity type. The radiation conversion device combines high radiation hardness with cost effective manufacturing.
申请公布号 US2014319641(A1) 申请公布日期 2014.10.30
申请号 US201313869121 申请日期 2013.04.24
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 Willmeroth Armin;Schulze Hans-Joachim
分类号 H01L31/0352;H01L31/18 主分类号 H01L31/0352
代理机构 代理人
主权项 1. A radiation conversion device, comprising: a semiconductor portion provided from a single-crystalline semiconductor material and comprising first compensation zones of a first conductivity type and a base portion separating the first compensation zones from each other, the first compensation zones arranged in pillar structures, each pillar structure comprising at least two of the first compensation zones and extending in a vertical direction with respect to a main surface of the semiconductor portion, and the base portion comprising second compensation zones of a second, complementary conductivity type between neighboring ones of the pillar structures.
地址 Villach AT