PLASMA CVD APPARATUS

摘要

A plasma CVD apparatus of the present invention includes: a vacuum chamber; a vacuum exhaust unit that evacuates the vacuum chamber so that the inside becomes a vacuum state; a gas supply unit that supplies a source gas into the vacuum chamber; a plasma generation power supply that generates plasma in the source gas supplied into the vacuum chamber; a plurality of rotation holding units that hold the substrates in a spinning state; and a plurality of revolution mechanisms that revolve the plurality of rotation holding units around a revolution axis parallel to a shaft center and rotation axes of the rotation holding units, wherein the respective revolution mechanisms are divided as any one of a first group connected to one electrode of the plasma generation power supply and a second group connected to the other electrode of the plasma generation power supply.

主权项

1. A plasma CVD apparatus that deposits a coating on each of a plurality of substrates as coating subjects, the plasma CVD apparatus comprising:
a vacuum chamber; a vacuum exhaust unit that evacuates the vacuum chamber so that the inside becomes a vacuum state; a gas supply unit that supplies a source gas into the vacuum chamber; a plasma generation power supply that generates plasma in the source gas supplied into the vacuum chamber; a plurality of rotation holding units that hold the substrates in a spinning state; and a plurality of revolution mechanisms that revolve the plurality of rotation holding units around a revolution axis parallel to rotation axes of the rotation holding units, wherein the respective revolution mechanisms are divided into any one of a first group connected to one electrode of the plasma generation power supply and a second group connected to the other electrode of the plasma generation power supply.