METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

A thin film having excellent uniformity of film thickness is formed. After performing a pretreatment on a surface of a substrate by supplying an oxygen containing gas and a hydrogen containing gas to the substrate placed inside a processing chamber whose pressure is lower than an atmospheric pressure, a cycle is repeatedly performed for a predetermined number of times, wherein the cycle comprises the following steps of: supplying a source gas to the substrate inside the processing chamber; and supplying a reaction gas to the substrate inside the processing chamber. As a result, a thin film is formed on the substrate on which a pretreatment has been performed.