发明名称 |
QUAD FLAT NO-LEAD (QFN) PACKAGING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A quad flat no-lead (QFN) packaging structure. The QFN packaging structure includes a metal substrate, a first outer die pad formed on the metal substrate, and a first die coupled to a top surface of the first outer die pad. The QFN packaging structure also includes a plurality of I/O pads formed on the metal substrate, and a first metal layer containing a plurality of inner leads corresponding to the plurality of I/O pads and extending to proximity of the die. The first metal layer is formed on the metal substrate by a multi-layer electrical plating process such that a lead pitch of the plurality of inner leads is significantly reduced. Further, the QFN packaging structure includes metal wires connecting die and the plurality of inner leads, and a second metal layer formed on a back surface of the plurality of I/O pads and the die pad. |
申请公布号 |
US2014319664(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
US201414260303 |
申请日期 |
2014.04.24 |
申请人 |
Jiangsu Changjiang Electronics Technology Co., Ltd. |
发明人 |
WANG Xinchao;LIANG Zhizhong |
分类号 |
H01L23/495;H01L21/56 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
1. A quad flat no-lead (QFN) packaging structure, comprising:
a) a metal substrate; b) a first outer die pad formed on the metal substrate; c) a first die coupled to a top surface of the first outer die pad; d) a plurality of I/O pads formed on the metal substrate; e) a first metal layer, containing a plurality of inner leads corresponding to the plurality of I/O pads and extending to proximity of the die, formed on the metal substrate by a multi-layer electrical plating process such that a lead pitch of the plurality of inner leads is significantly reduced; f) metal wires connecting die and the plurality of inner leads; and g) a second metal layer formed on a back surface of the plurality of I/O pads and the die pad;wherein
the die, the plurality of inner leads, and metal wires are sealed with a molding compound. |
地址 |
Wuxi CN |