| 摘要 |
Provided is a pattern forming method which, in forming fine patterns having a 50nm or smaller line width, reduces blob defects without sacrificing sensitivity, resolution, LWR and pattern shape and which in particular has excellent suppression of outgassing; also provided are a composition kit, a resist film using this, an electronic device manufacturing method, and an electronic device. This pattern forming method involves (i) a step in which a film is formed on a substrate using an actinic ray- or radiation-sensitive resin composition which contains (A) a resin which is decomposed by the action of an acid, changing in solubility in a developing liquid, and (C) a resin having one or more groups selected from the set consisting of a fluorine atom, a group containing a fluorine atom, a group containing a silicon atom, an alkyl group, a cycloalkyl group, aryl group, aralkyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group, (ii) a step in which a top coat layer is formed on the aforementioned film using a top coat composition that contains a resin (T), (iii) a step in which the film having the top coat layer is exposed using actinic rays or radiation, and (iv) a step in which, after the aforementioned exposure, the film having the top coat layer is developed to form the pattern. |
