| 摘要 |
Described is an arrangement for registering light, comprising: a MOS-transistor structure (101,201,401,501,601,701) having a first source/drain region (103), a second source/drain region (105), and a bulk region (107) at least partially between the first source/drain region and the second source/drain region, wherein the bulk region has a doping type different from another doping type of the first and the second source/drain regions, wherein in the bulk region (107) charge carriers are generated in dependence of light (111) impinging on the bulk region (107), wherein the generated charge carriers control a current flowing from the first source/drain region (103) to the second source/drain region (105) via at least a portion of the bulk region. |
