Semiconductor device and method for producing the same

摘要

A semiconductor device satisfies the condition Db ‰¤ (1/3) x Da, in which Da represents a distance between a top surface of a cathode segment (22) and an end of an embedded gate segment (26) facing an anode segment (24), and Db represents a distance between a highest-impurity concentration portion in the embedded gate segment (26) and an end of the cathode segment (22) facing the anode segment (24).