METHOD OF FORMING DOPED-GETE THIN FILM FOR THRESHOLD SWITCHING

摘要

The present invention relates to a method of forming a doped-GeTe thin film for threshold switching wherein Gete is doped with In and P in a sputtering method to be appropriate for a material for threshold switching such as a programmable device. A threshold switching device including a thin film for threshold switching of the present invention in configured to restrain phase change and to perform action of threshold switching as connectivity of structural network and network rigidity are improved by In and P which are combined to Te.