发明名称 Method of sharing in use an impedance matching circuit of a memory circuit to perform an initial calibration and a full time refresh mode calibration, and memory circuit with an impedance matching circuit capable of being used in an initial calibration and a full time refresh mode calibration
摘要 A method of sharing in use an impedance matching circuit of a memory circuit to perform an initial calibration and a full time refresh mode calibration includes supplying power to the memory circuit, utilizing the impedance matching circuit to perform the initial calibration on the memory circuit, the memory circuit exiting the initial calibration, the memory circuit entering a driving mode, the memory circuit exiting the driving mode every a predetermined interval, utilizing the impedance matching circuit to perform the full time refresh mode calibration on the memory circuit according to a refresh command, an output voltage detection circuit determining a level of an output voltage of the memory circuit, and performing a corresponding operation according to a determination result generated by the output voltage detection circuit.
申请公布号 US8872540(B2) 申请公布日期 2014.10.28
申请号 US201213547015 申请日期 2012.07.11
申请人 Etron Technology, Inc. 发明人 Shiah Chun;Hong Sen-Fu;Chen Wen-Wey
分类号 H03K19/003;G11C11/406;H03K19/00 主分类号 H03K19/003
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A method of sharing in use an impedance matching circuit of a memory circuit to perform an initial calibration and a full time refresh mode calibration, wherein the impedance matching circuit comprises a pull-up driver and a pull-down driver, the method comprising: supplying power to the memory circuit; utilizing the pull-up driver and the pull-down driver of the impedance matching circuit to perform the initial calibration on the memory circuit to adjust slew rates of a logic-high voltage and a logic-low voltage of an output voltage of the memory circuit; the memory circuit exiting the initial calibration; the memory circuit entering a driving mode; the memory circuit exiting the driving mode every a predetermined interval; utilizing the pull-up driver and the pull-down driver of the impedance matching circuit to perform the full time refresh mode calibration on the memory circuit according to a refresh command after exiting the driving mode, wherein a self-refresh period does not exist between the full time refresh mode and the driving mode; an output voltage detection circuit of the memory circuit determining a level of the output voltage of the memory circuit; and utilizing the pull-up driver and the pull-down driver of the impedance matching circuit to adjust the level of the output voltage according to a determination result generated by the output voltage detection circuit, a low reference voltage, and a high reference voltage, wherein the low reference voltage is different from the high reference voltage, and the pull-up driver and the pull-down driver are coupled to an output terminal of the memory circuit.
地址 Hsinchu TW