发明名称 |
Plasma spray method for the manufacture of an ion conductive membrane |
摘要 |
A plasma spray method for the manufacture of an ion conductive membrane is provided which ion conductive membrane has an ion conductivity, in which method the membrane is deposited as a layer (11) onto a substrate (10) in a process chamber, wherein a starting material (P) is sprayed onto a surface of the substrate (10) in the form of a process beam (2) by means of a process gas (G), wherein the starting material is injected into a plasma at a low process pressure, which is at most 10,000 Pa, and is partially or completely molten there. Oxygen (O2; 22) is supplied to the process chamber (12) during the spraying at a flow rate which amounts to at least 1%, preferably at least 2%, of the overall flow rate of the process gas. |
申请公布号 |
US8871010(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US201213421696 |
申请日期 |
2012.03.15 |
申请人 |
|
发明人 |
Gindrat Malko;Damani Rajiv J. |
分类号 |
B01D53/22;B01D67/00;B01D69/12;B01D71/02;C23C4/12;C23C4/04;C23C4/10 |
主分类号 |
B01D53/22 |
代理机构 |
Greenblum & Bernstein, P.L.C. |
代理人 |
Greenblum & Bernstein, P.L.C. |
主权项 |
1. A method of manufacturing an ion conductive membrane having an ion conductivity, the method comprising:
arranging a substrate in a process chamber; plasma spraying a starting material via a process beam that includes a process gas, wherein during the plasma spraying the starting material is injected into a plasma at a process pressure which is at most 10,000 Pa, and is partially or completely molten there; forming a layer on a surface of the substrate in the process chamber by depositing the plasma sprayed starting material; and supplying oxygen to the process chamber during the plasma spraying, wherein the oxygen is supplied at a flow rate which amounts to at least 1% of an overall flow rate of the process gas and from a location outside the process beam. |
地址 |
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