发明名称 |
Method for forming a cleaved facet of semiconductor device |
摘要 |
Embodiments disclose a method including forming at least one compound semiconductor layer on a top r-face of a substrate, forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line, wherein the guide line extends in a (11-22)-plane direction of the substrate, wherein the guide line extends from one portion of an edge to another portion of the edge, and wherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-22)-plane direction and to form a cleaved facet along a c-plane of the at least one compound semiconductor. |
申请公布号 |
US8871612(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US201213440640 |
申请日期 |
2012.04.05 |
申请人 |
LG Innotek Co., Ltd. |
发明人 |
Han Young Hun;Yoo Dong Han |
分类号 |
H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
KED & Associates, LLP |
代理人 |
KED & Associates, LLP |
主权项 |
1. A method for forming a cleaved facet of a semiconductor device, the method comprising:
forming at least one compound semiconductor layer on a top r-face of a substrate; forming a line for cleavage on a bottom r-face of the substrate along a length of a guide line,
wherein the guide line extends in a (11-22)-plane direction of the substrate,wherein the guide line extends from one portion of an edge to another portion of the edge, andwherein the edge is disposed between the top r-face and the bottom r-face of the substrate, and applying a force to the bottom r-face of the substrate to cleave the substrate along the line for cleavage in the (11-22)-plane direction and to form a cleaved facet along a c-plane of the at least one compound semiconductor. |
地址 |
Seoul KR |