Substrate processing method and storage medium

摘要

A recovery process of a damaged layer and a reducing process of an oxide are performed on a substrate in which the oxide and the damaged layer from which carbon has been eliminated are formed on exposed surfaces of a Cu wiring and a SiCOH film as a low-k film, respectively. In the same processing chamber 51, a recovery process of a damaged layer 15 and a reducing process of an oxide/fluoride layer 16 are performed on a wafer W in which the damaged layer 15 from which carbon has been eliminated and the oxide/fluoride layer 16 are formed on exposed surfaces of an interlayer insulating film 4 containing SiCOH and a wiring 2 containing Cu, respectively, by consecutively supplying H2 gas and TMSDMA gas containing silicon and carbon in sequence.

主权项

1. A substrate processing method for manufacturing a semiconductor device, a substrate including a low-k film having an opening, a stopper film containing silicon, and a metal layer which are layered in this sequence from the top,
the substrate processing method comprising: coating an organic film within the opening of the low-k film; etching the organic film using a processing gas containing oxygen and etching the low-k film using a processing gas containing fluorine; performing an ashing process using plasma of a processing gas containing oxygen to remove the organic film and forming a damaged layer from which carbon has been eliminated on an exposed surface of the low-k film by the plasma of the processing gas containing oxygen; etching the stopper film by way of supplying plasma of a processing gas containing oxygen and fluorine via the opening to the stopper film to expose the metal layer; reducing an oxide of the metal layer by supplying a reducing gas into a processing chamber accommodating therein the substrate in which the low-k film containing carbon and oxygen and the metal layer having an oxidized surface are exposed; and recovering the damaged layer by supplying a recovery process gas containing carbon to the substrate, wherein the reducing process and the recovery process are consecutively performed in the common processing chamber.