发明名称 Cleaning nozzle for advanced lithography process
摘要 The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a lithography tool. The lithography tool includes: a first nozzle configured to dispense a developer solution to a wafer; a second nozzle configured to dispense a cleaning solution to the first nozzle; and a controller configured to operate the second nozzle according to a predefined program. The present disclosure also provides a method of fabricating a semiconductor device. The method includes performing a developing process, wherein the performing the developing process includes dispensing a developer solution on a wafer using a first nozzle. The method also includes cleaning the first nozzle with a second nozzle, wherein the cleaning the first nozzle is executed according to one of a plurality of program recipes that each specify a sequence and a duration for which the first nozzle and the second nozzle are to be selectively activated.
申请公布号 US8873020(B2) 申请公布日期 2014.10.28
申请号 US201113216310 申请日期 2011.08.24
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yang Ching-Hai;Li Shang-Sheng
分类号 G03B27/32;B05B17/04;H01L21/67;B05B15/02 主分类号 G03B27/32
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. An apparatus for fabricating a semiconductor device, comprising: a lithography tool that includes: a first nozzle configured to dispense a developer solution to a wafer;a second nozzle configured to dispense a cleaning solution to the first nozzle;an exhaust component configured to remove moisture, wherein the exhaust component includes a vacuum pump or a fan; anda controller configured to operate the second nozzle according to a predefined program and configured to operate the exhaust component to remove moisture from inside the lithography tool.
地址 Hsin-Chu TW