发明名称 |
Method of manufacturing a semiconductor template |
摘要 |
A method for manufacturing a semiconductor template balanced between strains and defects is provided, the method including steps of: preparing a substrate, dividing the substrate into a plurality of first patterned zones and a plurality of second patterned zones, the second patterned zones applied to separate the first patterned zones; selecting a semiconductor with an ideal lattice of a semiconductor buffer layer to be deposited on the substrate; etching a plurality of first microstructures in the first patterned zones according to the semiconductor with the ideal lattice, the first microstructures and the semiconductor with the ideal lattice following a lattice-structure matching relationship, discovered by strain-traction experiments, making the substrate a multi-patterned substrate; and depositing the semiconductor buffer layer having the semiconductor with the ideal lattice on the multi-patterned substrate to manufacture a semiconductor template which is balanced between strains and defects. |
申请公布号 |
US8871652(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US201313834996 |
申请日期 |
2013.03.15 |
申请人 |
Kingwave Corporation |
发明人 |
Kuan Chieh-Hsiung;Su Wen-Sheng |
分类号 |
H01L21/461;H01L21/02 |
主分类号 |
H01L21/461 |
代理机构 |
Rosenberg, Klein & Lee |
代理人 |
Rosenberg, Klein & Lee |
主权项 |
1. A method for manufacturing a semiconductor template balanced between strains and defects, discovered by strain-traction experiments in a preferred embodiment, the method comprising steps of:
(a) preparing a substrate, dividing the substrate into a plurality of first patterned zones and a plurality of second patterned zones, the second patterned zones applied to separate the first patterned zones; (b) selecting a semiconductor with an ideal lattice of a semiconductor buffer layer to be deposited on the substrate; (c) etching a plurality of first microstructures in the first patterned zones according to the semiconductor with the ideal lattice, the first microstructures and the semiconductor with the ideal lattice following a lattice-structure matching relationship, discovered by strain-traction experiments, making the substrate a multi-patterned substrate; and (d) depositing the semiconductor buffer layer having the semiconductor with the ideal lattice on the multi-patterned substrate to manufacture a semiconductor template balanced between strains and defects; wherein when the deposition of the semiconductor buffer layer follows the lattice-structure matching relationship, discovered by strain-traction experiments in the preferred embodiment, it is expected that the semiconductor buffer layer is affected by the difference between a strain-traction force in the semiconductor with the ideal lattice on the first patterned zones and in a semiconductor with a lattice on the second patterned zones; owing to the lower lattice-constant mismatch in the semiconductor buffer layer grown on the first microstructures, the residual strains in the semiconductor buffer layer are accumulated toward the outside of the first patterned zones; as a result, the strains in the semiconductor buffer layer on the first patterned zones are relaxed. |
地址 |
Taipei TW |