| 发明名称 | Sealed air gap for semiconductor chip | ||
| 摘要 | A method for forming a sealed air gap for a semiconductor chip including forming a gate over a substrate; forming a sacrificial spacer adjacent to the gate; forming a first dielectric layer about the gate and the sacrificial spacer; forming a contact to the gate; substantially removing the sacrificial spacer, wherein a space is formed between the gate and the first dielectric layer; and forming a sealed air gap in the space by depositing a second dielectric layer over the first dielectric layer. | ||
| 申请公布号 | US8871624(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201313742916 | 申请日期 | 2013.01.16 |
| 申请人 | International Business Machines Corporation | 发明人 | Horak David V.;Huang Elbert E.;Koburger, III Charles W.;La Tulipe, Jr. Douglas C.;Ponoth Shom |
| 分类号 | H01L29/40;H01L29/49;H01L29/66;H01L21/8234 | 主分类号 | H01L29/40 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Le Strange Michael J.;Hoffman Warnick LLC |
| 主权项 | 1. A method, comprising: forming a gate over a substrate; forming a cap directly over the gate; forming a sacrificial spacer adjacent to the gate; forming a first dielectric layer about the gate and the sacrificial spacer; forming a contact channel through the first dielectric layer, a first portion of the sacrificial spacer, and a second portion of the cap; forming a contact in the contact channel to the gate; substantially removing the sacrificial spacer, wherein a space is formed between the gate and the first dielectric layer; and forming a sealed air gap in the space by depositing a second dielectric layer over the first dielectric layer. | ||
| 地址 | Armonk NY US | ||