Application specific implant system and method for use in solar cell fabrications

摘要

Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate includes an ion source (such as a single-species delivery module), an accelerator to generate from the ion source an ion beam having an energy of no more than 150 kV, and a beam director to expose the substrate to the beam. In one embodiment, the ion source is single-species delivery module that includes a single-gas delivery element and a single-ion source. Alternatively, the ion source is a plasma source used to generate a plasma beam. The system is used to fabricate solar cells having lightly doped photo-receptive regions and more highly doped grid lines. This structure reduces the formation of “dead layers” and improves the contact resistance, thereby increasing the efficiency of a solar cell.

主权项

1. A method of fabricating a semiconductor device comprising:
doping photo-receptive regions within a substrate to a first concentration; doping the photo-receptive regions to a second concentration larger than the first concentration to form gridlines, wherein the gridlines extend from topmost surfaces of the photo-receptive regions down into the substrate; and coupling metal fingers to the gridlines, wherein the photo-receptive regions and the gridlines are doped using a system comprising a single-species delivery module; and, further comprising implanting a seed on each of the gridlines before coupling the gridlines to metallic fingers.