Silicon carbide semiconductor device and method of manufacturing thereof

摘要

A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the surface of the semiconductor layer. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the semiconductor layer and the insulating film is not less than 1×1021 cm−3, and the semiconductor device has a channel direction in a range of ±10° relative to the direction orthogonal to the <−2110> direction in the surface of the semiconductor layer. A method of manufacturing the silicon carbide semiconductor device is also provided.

主权项

1. A silicon carbide semiconductor device comprising:
a hexagonal crystal semiconductor layer made of silicon carbide and having a surface tilted at an angle in a range of not less than 50° and not more than 65° relative to a {0001} plane; and an insulating film formed to contact said surface of said semiconductor layer, a maximum value of a nitrogen concentration in a region within 10 nm from an interface between said semiconductor layer and said insulating film being not less than 1×1021 cm−3, and said silicon carbide semiconductor device having a channel direction in a range of ±10° relative to a direction orthogonal to a <−2110> direction in said surface of said semiconductor layer.