| 摘要 |
<p>The present invention relates to a semiconductor power device, comprising: a semiconductor substrate; a well area doped by a dopant type different from a dopant doped on the semiconductor substrate; a drain area formed on a portion of the well area; an insulation film to insulate between a gate and the drain area; a buried layer which is formed on the well and is doped by the same dopant type as the semiconductor substrate; and a doping layer doped by a different dopant type, wherein the buried layer and the doping layer are formed to be in contact with the drain area. According to the present invention, the semiconductor power device can reduce a resistance component by the dopant in the well area, thereby improving a breakdown voltage and securing fast switching properties compared to an existing power device. Furthermore, a structure according to the present invention can be widely used by being applied to the power device including an epitaxial layer and the power device to which localized oxidation of silicon, an oxide film, an insulation film, a trench structure, or the like are applied.</p> |
