发明名称 |
Metal gate structure for semiconductor devices |
摘要 |
Disclosed herein are various embodiments of an improved metal gate structure for semiconductor devices, such as transistors. In one example disclosed herein, a transistor has a gate structure consisting of a gate insulation layer positioned on a semiconducting substrate, a high-k insulation layer positioned on the gate insulation layer, a layer of titanium nitride positioned on the high-k insulation layer, a layer of aluminum positioned on the layer of titanium nitride and a layer of polysilicon positioned on the layer of aluminum. |
申请公布号 |
US8872285(B2) |
申请公布日期 |
2014.10.28 |
申请号 |
US201313781907 |
申请日期 |
2013.03.01 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Scheiper Thilo;Grass Carsten;Carter Richard;Trentzsch Martin |
分类号 |
H01L21/02;H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
Amerson Law Firm, PLLC |
代理人 |
Amerson Law Firm, PLLC |
主权项 |
1. A transistor formed in and above a semiconducting substrate, said transistor having a gate structure consisting of:
a silicon dioxide gate insulation layer positioned on said semiconducting substrate, said silicon dioxide gate insulation layer having a thickness of about 1 nm; a single layer of hafnium oxide or hafnium silicate positioned on said silicon dioxide gate insulation layer, said single layer of hafnium oxide or hafnium silicate having a thickness of about 1.7 nm; a layer of titanium nitride positioned on said layer of hafnium oxide or hafnium silicate, said layer of titanium nitride having a thickness of about 2 nm; a layer of aluminum positioned on said layer of titanium nitride; and a layer of polysilicon positioned on said layer of aluminum. |
地址 |
Grand Cayman KY |