| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor element which has an element structure in which a first electrode layer, a compound semiconductor film and a second electrode layer are sequentially formed on a substrate, and which can inhibit increase in sheet resistance of the first electrode layer even when a deposition process of the compound semiconductor film includes a calcination process under an atmosphere containing a chalcogen element.SOLUTION: A compound semiconductor element 10 comprises a first electrode layer 12, a compound semiconductor film 13 and a second electrode layer 16 which are sequentially formed on a substrate 11. The first electrode layer 12 has a laminated structure which includes when viewed from the substrate 11 side, a first metal layer having a melting point higher than that of Au, a second metal layer consisting chiefly of Au and a third metal layer having a melting point higher than that of Au. |
