发明名称 METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR AND FIELD EFFECT TRANSISTOR
摘要 <p>PROBLEM TO BE SOLVED: To manufacture a field effect transistor, excellent in solubility to an organic solvent, using a bicycloporphyrin compound that becomes an organic semiconductor material of high mobility with a low temperature heating treatment.SOLUTION: An organic semiconductor layer of a field effect transistor is formed by applying to a substrate a solution formed by dissolving in an organic solvent a precursor composed of a bicycloporphyrin compound having a structure represented by a formula (I) or (II), and heating it to transfer to a bicycloporphyrin compound of high mobility.</p>
申请公布号 JP2014203886(A) 申请公布日期 2014.10.27
申请号 JP20130076965 申请日期 2013.04.02
申请人 MITSUBISHI CHEMICALS CORP 发明人 SAKAI YOSHIMASA
分类号 H01L51/05;H01L21/336;H01L29/786;H01L51/30;H01L51/40 主分类号 H01L51/05
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