METHOD OF PRODUCING SEMICONDUCTOR WAFER AND SYSTEM FOR DETERMINING CUTTING POSITION OF SEMICONDUCTOR INGOT

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor wafer free of grow-in defects and a system for determining a cutting position of a semiconductor ingot which accurately inspect every region other than N region.SOLUTION: A method of producing a semiconductor wafer free of grow-in defects by a Czochralski method comprises: growing a silicon semiconductor ingot (S2); measuring a distribution of oxygen concentration in a growth axis direction of the silicon semiconductor ingot (S4); analyzing the measured oxygen concentration by comparing with a target value (S5); and determining a cutting position to include a position having a specified value or greater when a difference between the measured oxygen concentration and the target value is equal to or greater than the specified value (S6). The method further comprises: determining cutting positions to minimize the number of blocks when the difference between the measured oxygen concentration and the target value is smaller than the specified value; and slicing each block obtained by cutting the silicon semiconductor ingot at the determined cutting position into semiconductor wafers.