发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a flash memory capable of suppressing power consumption and performing high-speed operation.SOLUTION: A flash memory 100 includes: a memory array 110; a word line selection circuit 160; a current detection type sense circuit 170 that is connected to each of the memory array and detects current that flows through a selected bit line; and erasure means that erases data of memory cells of a selected block in the memory array. The erasure means includes: an erasure sequence in which whether or not the current flowing through each of the bit lines of the block for which erasure has been performed is greater than a first value is determined and, if the current flowing through each of the bits is greater than the first value, erasure verification is completed; and a sequence in which a soft-program voltage is applied to all word lines of the block for which the erasure has been performed, soft-program verification for determining whether or not the current flowing through each of the bit lines is smaller than a second value is performed, and if the current flowing through each of the bit lines is smaller than the second value, the soft-program sequence is completed.</p>
申请公布号 JP2014203498(A) 申请公布日期 2014.10.27
申请号 JP20130081020 申请日期 2013.04.09
申请人 WINBOND ELECTRONICS CORP 发明人 YANO MASARU
分类号 G11C16/02;G11C16/04;G11C16/06 主分类号 G11C16/02
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