| 摘要 |
<p>Provided are a storage cell and a storage method with which information consisting of three or four values is stored using the tunneling magnetoresistive effect. In a parallel-connection circuit comprising first and second elements (101, 102) that respectively include first and second free-layer sections (131, 132) formed at mutually-different positions in a free magnetic layer (13) and first and second fixed-layer sections (111, 112), three values are stored by distinguishing among the three resistance values achieved by locating the magnetic wall (19) at a first end (18a), a second end (18c), or a middle section (18b), and the magnetic wall (19) is moved by passing a writing current through the free magnetic layer (13) to thereby rewrite the stored values. In a series-connection circuit comprising a first element, which includes a fixed layer and a first upper-free-layer section formed in an upper free magnetic layer, and a second element, which includes a second upper-free-layer section formed in the upper free magnetic layer and a lower-free-layer section formed in a lower free magnetic layer, three or four values are stored in accordance with the combination of the positions of the magnetic wall in the upper free magnetic layer and the positions of the magnetic wall in the lower free magnetic layer.</p> |
