| 摘要 |
<p>A method of producing a grown single crystal diamond substrate comprises: providing a first diamond substrate which presents a (001) major surface, bounded by at least one < 100 > edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one < 100 > edge by a ratio of at least 1.3 : 1; and growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to, and laterally from the major (001) surface. The growth of the diamond material may be carried out in one or more steps until the lateral growth of the diamond material has achieved full effective rotation of the (001) major surface. Diamond material grown by this method is also disclosed.</p> |
