SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device has a plurality of closely spaced fins each coated at its top and sidewalls with a SiGe layer used for improving charge carrier mobility in a channel portion of the device. The sidewalls of the closely adjacent Fins are selectively thinned so as to prevent an undesired bridging of SiGe material between immediately adjacent ones of the Fins. A method of manufacturing the same comprises: providing a substrate having a plurality of tri-gate transistors, at least two fins of the tri-gate transistors being closely adjacent to each other, where respective top and sidewall surfaces of the fins are coated with a SiGe layer; performing a tilted ion implantation on the SiGe coated fins so as to partially convert the SiGe material into a predetermined etch resistant material (e.g., and oxide of the SiGe); and etching away the non-converted sidewall parts of the SiGe coating layers so as to provide greater spacing between the immediately adjacent sidewalls of the SiGe coated fins.

主权项

1. A method of thinly coating a plurality of closely spaced fins of a semiconductor device, the method comprising:
providing a substrate having a plurality of closely spaced and semiconductive fins projecting vertically there above, wherein outer surfaces (including respective top surfaces) of the fins are coated with a convertible material different from that of the semiconductive fins and wherein the convertible material is chemically convertible into a predetermined etch resisting material; selectively converting respective portions of the respective convertible material coatings of the respective fins into the predetermined etch resisting material, where the converted portions are more adjacent to the respective vertical projection axes of the vertically projecting fins than are unconverted remaining portions of the convertible material coatings; selectively etching away portions of the respective convertible material coatings that are not masked by the converted and thus etch resisting material to thereby cause the closely spaced semiconductive fins to be less thickly coated about their respective vertical projection axes by the convertible material.